FQI9N50TU MOSFET Transistor

The FQI9N50TU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI9N50TU transistor as follows.

FQI9N50TU Transistor Specification

Transistor Code		FQI9N50TU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2-PAK
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.73Ohm
Power Dissipation (Maximum)	PD	147W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		95nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		28nC

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