FQI9N15TU MOSFET Transistor

The FQI9N15TU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI9N15TU transistor as follows.

FQI9N15TU Transistor Specification

Transistor Code		FQI9N15TU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2-PAK
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.4Ohm
Power Dissipation (Maximum)	PD	75W
Drain-Source Capacitance		80pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		58nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		10nC

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