FQI9N08TU MOSFET Transistor

The FQI9N08TU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI9N08TU transistor as follows.

FQI9N08TU Transistor Specification

Transistor Code		FQI9N08TU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2-PAK
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	9.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.21Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		70pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		28nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		5.9nC

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