FQI9N08LTU MOSFET Transistor

The FQI9N08LTU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI9N08LTU transistor as follows.

FQI9N08LTU Transistor Specification

Transistor Code		FQI9N08LTU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2-PAK
Drain-Source Voltage (Maximum)	VDS	80V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.21Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		70pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		180nS
Gate-Threshold Voltage (Maximum)		2V
Total Gate Charge		4.7nC

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