FQI8N60C MOSFET Transistor

The FQI8N60C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI8N60C transistor as follows.

FQI8N60C Transistor Specification

Transistor Code		FQI8N60C
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO262_I2PAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.2Ohm
Power Dissipation (Maximum)	PD	147W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		28nC

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