FQI7N10TU MOSFET Transistor

The FQI7N10TU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI7N10TU transistor as follows.

FQI7N10TU Transistor Specification

Transistor Code		FQI7N10TU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2-PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	7.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.35Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		60pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		24nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		5.8nC

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