FQI5N15TU MOSFET Transistor

The FQI5N15TU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI5N15TU transistor as follows.

FQI5N15TU Transistor Specification

Transistor Code		FQI5N15TU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2-PAK
Drain-Source Voltage (Maximum)	VDS	150V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	5.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.8Ohm
Power Dissipation (Maximum)	PD	54W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		45nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		5.4nC

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