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FQI50N06TU MOSFET Transistor

The FQI50N06TU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI50N06TU transistor as follows.

Circuit diagram symbol of the FQI50N06TU transistor

FQI50N06TU Transistor Specification

Transistor Code FQI50N06TU
Transistor Type MOSFET
Control Channel Type N-Channel
Package I2-PAK
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 50A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.022Ohm
Power Dissipation (Maximum) PD 120W
Drain-Source Capacitance 440pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 105nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 31nC

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