FQI50N06TU MOSFET Transistor

The FQI50N06TU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI50N06TU transistor as follows.

FQI50N06TU Transistor Specification

Transistor Code		FQI50N06TU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2-PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	120W
Drain-Source Capacitance		440pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		105nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		31nC

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