FQI4N90 MOSFET Transistor

The FQI4N90 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI4N90 transistor as follows.

FQI4N90 Transistor Specification

Transistor Code		FQI4N90
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO262_I2PAK
Drain-Source Voltage (Maximum)	VDS	900V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.1Ohm
Power Dissipation (Maximum)	PD	140W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		24nC

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