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FQI47P06TU MOSFET Transistor

The FQI47P06TU is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI47P06TU transistor as follows.

Circuit diagram symbol of the FQI47P06TU transistor

FQI47P06TU Transistor Specification

Transistor Code FQI47P06TU
Transistor Type MOSFET
Control Channel Type P-Channel
Package I2-PAK
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 47A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.026Ohm
Power Dissipation (Maximum) PD 160W
Drain-Source Capacitance 1300pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 450nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 84nC

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