FQI3P20TU MOSFET Transistor

The FQI3P20TU is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI3P20TU transistor as follows.

FQI3P20TU Transistor Specification

Transistor Code		FQI3P20TU
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		I2-PAK
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.7Ohm
Power Dissipation (Maximum)	PD	52W
Drain-Source Capacitance		45pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		35nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		6nC

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