FQI2N30TU MOSFET Transistor

The FQI2N30TU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI2N30TU transistor as follows.

FQI2N30TU Transistor Specification

Transistor Code		FQI2N30TU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2-PAK
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.7Ohm
Power Dissipation (Maximum)	PD	40W
Drain-Source Capacitance		25pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		26nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		3.7nC

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