FQI27N25 MOSFET Transistor

The FQI27N25 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI27N25 transistor as follows.

FQI27N25 Transistor Specification

Transistor Code		FQI27N25
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO262_I2PAK
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	25.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.11Ohm
Power Dissipation (Maximum)	PD	180W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		50nC

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