FQI12N60TU MOSFET Transistor

The FQI12N60TU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI12N60TU transistor as follows.

FQI12N60TU Transistor Specification

Transistor Code		FQI12N60TU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2-PAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	10.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.7Ohm
Power Dissipation (Maximum)	PD	180W
Drain-Source Capacitance		200pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		115nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		42nC

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