FQI12N50TU MOSFET Transistor

The FQI12N50TU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI12N50TU transistor as follows.

FQI12N50TU Transistor Specification

Transistor Code		FQI12N50TU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2-PAK
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	12.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.49Ohm
Power Dissipation (Maximum)	PD	179W
Drain-Source Capacitance		220pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		120nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		39nC

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