FQI11P06TU MOSFET Transistor

The FQI11P06TU is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI11P06TU transistor as follows.

FQI11P06TU Transistor Specification

Transistor Code		FQI11P06TU
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		I2-PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	11.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.175Ohm
Power Dissipation (Maximum)	PD	53W
Drain-Source Capacitance		195pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		13nC

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