FQI10N60CTU MOSFET Transistor

The FQI10N60CTU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI10N60CTU transistor as follows.

FQI10N60CTU Transistor Specification

Transistor Code		FQI10N60CTU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2-PAK
Drain-Source Voltage (Maximum)	VDS	600V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.73Ohm
Power Dissipation (Maximum)	PD	156W
Drain-Source Capacitance		166pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		69nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		44nC

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