FQI10N20CTU MOSFET Transistor

The FQI10N20CTU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQI10N20CTU transistor as follows.

FQI10N20CTU Transistor Specification

Transistor Code		FQI10N20CTU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		I2-PAK
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.36Ohm
Power Dissipation (Maximum)	PD	72W
Drain-Source Capacitance		97pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		92nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		20nC

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