FQH70N10 MOSFET Transistor

The FQH70N10 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQH70N10 transistor as follows.

FQH70N10 Transistor Specification

Transistor Code		FQH70N10
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-247
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	70A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.023Ohm
Power Dissipation (Maximum)	PD	214W
Drain-Source Capacitance		720pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		470nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		85nC

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