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FQE10N20CTU MOSFET Transistor

The FQE10N20CTU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQE10N20CTU transistor as follows.

Circuit diagram symbol of the FQE10N20CTU transistor

FQE10N20CTU Transistor Specification

Transistor Code FQE10N20CTU
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-126
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.36Ohm
Power Dissipation (Maximum) PD 12.8W
Drain-Source Capacitance 97pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 92nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 20nC

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