FQD9N25TM MOSFET Transistor

The FQD9N25TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD9N25TM transistor as follows.

FQD9N25TM Transistor Specification

Transistor Code		FQD9N25TM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D-PAK
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.42Ohm
Power Dissipation (Maximum)	PD	55W
Drain-Source Capacitance		110pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		105nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		15.5nC

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