FQD7P06TM MOSFET Transistor

The FQD7P06TM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD7P06TM transistor as follows.

FQD7P06TM Transistor Specification

Transistor Code		FQD7P06TM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		D-PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	5.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.451Ohm
Power Dissipation (Maximum)	PD	28W
Drain-Source Capacitance		110pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		50nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		6.3nC

UXPython is not the creator or an official representative of the FQD7P06TM MOSFET transistor. You can download the official FQD7P06TM MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in P-Channel MOSFET

FQD5N20LTM MOSFET Transistor FQD4N50TF MOSFET Transistor FDD6N50TF MOSFET Transistor FCD4N60TF MOSFET Transistor FQD5N60CTM MOSFET Transistor FQD20N06L MOSFET Transistor HFD5N70S MOSFET Transistor HFD5N60U MOSFET Transistor FQD6N25TF MOSFET Transistor FQD5N50CTM MOSFET Transistor FQD6P25TM MOSFET Transistor FQD4N20LTM MOSFET Transistor HFD4N50 MOSFET Transistor FQD1N60CTM MOSFET Transistor HFD5N65S MOSFET Transistor FCD3400N80Z MOSFET Transistor FQD12P10TF MOSFET Transistor FQD10N20LTF MOSFET Transistor FQD6N40CTF MOSFET Transistor FQD5N30TM MOSFET Transistor