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FQD7N20TM MOSFET Transistor

The FQD7N20TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD7N20TM transistor as follows.

Circuit diagram symbol of the FQD7N20TM transistor

FQD7N20TM Transistor Specification

Transistor Code FQD7N20TM
Transistor Type MOSFET
Control Channel Type N-Channel
Package D-PAK
Drain-Source Voltage (Maximum) VDS 200V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 5.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.69Ohm
Power Dissipation (Maximum) PD 45W
Drain-Source Capacitance 60pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 65nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 8nC

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