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FQD6N40C MOSFET Transistor

The FQD6N40C is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD6N40C transistor as follows.

Circuit diagram symbol of the FQD6N40C transistor

FQD6N40C Transistor Specification

Transistor Code FQD6N40C
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO252_DPAK
Drain-Source Voltage (Maximum) VDS 400V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 1Ohm
Power Dissipation (Maximum) PD 48W
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 16nC

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