FQD6N25TM MOSFET Transistor

The FQD6N25TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD6N25TM transistor as follows.

FQD6N25TM Transistor Specification

Transistor Code		FQD6N25TM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D-PAK
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	4.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1Ohm
Power Dissipation (Maximum)	PD	45W
Drain-Source Capacitance		50pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		65nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		6.6nC

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