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FQD5P10 MOSFET Transistor

The FQD5P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD5P10 transistor as follows.

Circuit diagram symbol of the FQD5P10 transistor

FQD5P10 Transistor Specification

Transistor Code FQD5P10
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO252_DPAK
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 3.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 1.05Ohm
Power Dissipation (Maximum) PD 25W
Operating Junction Temperature (Maximum) 150°C

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