FQD5N50 MOSFET Transistor

The FQD5N50 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD5N50 transistor as follows.

FQD5N50 Transistor Specification

Transistor Code		FQD5N50
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-252
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.8Ohm
Power Dissipation (Maximum)	PD	50W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		18nC

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