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FQD4N50TM MOSFET Transistor

The FQD4N50TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD4N50TM transistor as follows.

Circuit diagram symbol of the FQD4N50TM transistor

FQD4N50TM Transistor Specification

Transistor Code FQD4N50TM
Transistor Type MOSFET
Control Channel Type N-Channel
Package D-PAK
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 2.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.7Ohm
Power Dissipation (Maximum) PD 45W
Drain-Source Capacitance 55pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 45nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 10nC

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