FQD4N25TM MOSFET Transistor

The FQD4N25TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD4N25TM transistor as follows.

FQD4N25TM Transistor Specification

Transistor Code		FQD4N25TM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D-PAK
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.75Ohm
Power Dissipation (Maximum)	PD	37W
Drain-Source Capacitance		35pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		45nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		4.3nC

UXPython is not the creator or an official representative of the FQD4N25TM MOSFET transistor. You can download the official FQD4N25TM MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

FQD12P10TM MOSFET Transistor HFD5N40 MOSFET Transistor FQD7P06TF MOSFET Transistor FQD8P10TM MOSFET Transistor FQD10N20CTM MOSFET Transistor SSR1N45 MOSFET Transistor HFD5N70S MOSFET Transistor FQD13N06LTF MOSFET Transistor FDD6670AL MOSFET Transistor HRD13N10K MOSFET Transistor FQD16N15TM MOSFET Transistor FQD5N15TF MOSFET Transistor FQD2N40TM MOSFET Transistor HFD5N60S MOSFET Transistor HFD5N50S MOSFET Transistor FQD6P25TM MOSFET Transistor FQD1N60CTM MOSFET Transistor HFD2N60 MOSFET Transistor FQD1P50TF MOSFET Transistor FQD7N10LTF MOSFET Transistor