FQD4N25 MOSFET Transistor

The FQD4N25 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD4N25 transistor as follows.

FQD4N25 Transistor Specification

Transistor Code		FQD4N25
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252_DPAK
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.75Ohm
Power Dissipation (Maximum)	PD	37W
Operating Junction Temperature (Maximum)		150°C

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