FQD3P50TF MOSFET Transistor

The FQD3P50TF is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD3P50TF transistor as follows.

FQD3P50TF Transistor Specification

Transistor Code		FQD3P50TF
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		D-PAK
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	4.9Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		70pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		56nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		18nC

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