FQD3N50CTF MOSFET Transistor

The FQD3N50CTF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD3N50CTF transistor as follows.

FQD3N50CTF Transistor Specification

Transistor Code		FQD3N50CTF
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D-PAK
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2.5Ohm
Power Dissipation (Maximum)	PD	35W
Drain-Source Capacitance		65pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		10nC

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