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FQD30N06TF MOSFET Transistor

The FQD30N06TF is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD30N06TF transistor as follows.

Circuit diagram symbol of the FQD30N06TF transistor

FQD30N06TF Transistor Specification

Transistor Code FQD30N06TF
Transistor Type MOSFET
Control Channel Type N-Channel
Package D-PAK
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 22.7A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.045Ohm
Power Dissipation (Maximum) PD 44W
Drain-Source Capacitance 270pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 85nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 19nC

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