FQD2N30TM MOSFET Transistor

The FQD2N30TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD2N30TM transistor as follows.

FQD2N30TM Transistor Specification

Transistor Code		FQD2N30TM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D-PAK
Drain-Source Voltage (Maximum)	VDS	300V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	3.7Ohm
Power Dissipation (Maximum)	PD	25W
Drain-Source Capacitance		25pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		26nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		3.7nC

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