FQD20N06TM MOSFET Transistor

The FQD20N06TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD20N06TM transistor as follows.

FQD20N06TM Transistor Specification

Transistor Code		FQD20N06TM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D-PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	16.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.063Ohm
Power Dissipation (Maximum)	PD	38W
Drain-Source Capacitance		170pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		45nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		11.5nC

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