FQD20N06L MOSFET Transistor

The FQD20N06L is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD20N06L transistor as follows.

FQD20N06L Transistor Specification

Transistor Code		FQD20N06L
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D-PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	17.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.06Ohm
Power Dissipation (Maximum)	PD	38W
Drain-Source Capacitance		175pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		165nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		9.5nC

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