FQD20N06 MOSFET Transistor

The FQD20N06 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD20N06 transistor as follows.

FQD20N06 Transistor Specification

Transistor Code		FQD20N06
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252_DPAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	16.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.063Ohm
Power Dissipation (Maximum)	PD	38W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		11.5nC

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