FQD1N80 MOSFET Transistor

The FQD1N80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD1N80 transistor as follows.

FQD1N80 Transistor Specification

Transistor Code		FQD1N80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252_DPAK
Drain-Source Voltage (Maximum)	VDS	800V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	20Ohm
Power Dissipation (Maximum)	PD	45W
Operating Junction Temperature (Maximum)		150°C

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