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FQD19N10LTM MOSFET Transistor

The FQD19N10LTM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD19N10LTM transistor as follows.

Circuit diagram symbol of the FQD19N10LTM transistor

FQD19N10LTM Transistor Specification

Transistor Code FQD19N10LTM
Transistor Type MOSFET
Control Channel Type N-Channel
Package D-PAK
Drain-Source Voltage (Maximum) VDS 100V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 15.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.1Ohm
Power Dissipation (Maximum) PD 50W
Drain-Source Capacitance 160pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 410nS
Gate-Threshold Voltage (Maximum) 2V
Total Gate Charge 14nC

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