FQD17P06TM MOSFET Transistor

The FQD17P06TM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD17P06TM transistor as follows.

FQD17P06TM Transistor Specification

Transistor Code		FQD17P06TM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		D-PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.135Ohm
Power Dissipation (Maximum)	PD	44W
Drain-Source Capacitance		325pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		100nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		21nC

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