FQD17P06 MOSFET Transistor

The FQD17P06 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD17P06 transistor as follows.

FQD17P06 Transistor Specification

Transistor Code		FQD17P06
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO252_DPAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	25V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.135Ohm
Power Dissipation (Maximum)	PD	44W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		21nC

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