FQD12P10TM MOSFET Transistor

The FQD12P10TM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD12P10TM transistor as follows.

FQD12P10TM Transistor Specification

Transistor Code		FQD12P10TM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		D-PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.29Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		220pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		160nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		21nC

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