FQD12P10TM MOSFET Transistor

The FQD12P10TM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD12P10TM transistor as follows.

FQD12P10TM Transistor Specification

Transistor Code		FQD12P10TM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		D-PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.29Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		220pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		160nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		21nC

UXPython is not the creator or an official representative of the FQD12P10TM MOSFET transistor. You can download the official FQD12P10TM MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in P-Channel MOSFET

FQD7P06TF MOSFET Transistor FQD7N20LTM MOSFET Transistor FQD19N10TF MOSFET Transistor FQD10N20TF MOSFET Transistor HFD2N60 MOSFET Transistor FCD3400N80Z MOSFET Transistor FQD17N08LTM MOSFET Transistor FQD17P06TM MOSFET Transistor FDD7030BL MOSFET Transistor FQD3N50CTF MOSFET Transistor HRD13N10K MOSFET Transistor SSR2N60B MOSFET Transistor HFD4N50 MOSFET Transistor FQD13N06LTF MOSFET Transistor FQD13N06LTM MOSFET Transistor FQD5P10TM MOSFET Transistor FQD2N100TM MOSFET Transistor HFD6N70U MOSFET Transistor FQD1P50TM MOSFET Transistor FQD7N20LTF MOSFET Transistor