FQD12N20 MOSFET Transistor

The FQD12N20 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD12N20 transistor as follows.

FQD12N20 Transistor Specification

Transistor Code		FQD12N20
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO252_DPAK
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.28Ohm
Power Dissipation (Maximum)	PD	55W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		18nC

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