FQD11P06TM MOSFET Transistor

The FQD11P06TM is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD11P06TM transistor as follows.

FQD11P06TM Transistor Specification

Transistor Code		FQD11P06TM
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		D-PAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.185Ohm
Power Dissipation (Maximum)	PD	38W
Drain-Source Capacitance		195pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		13nC

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