FQD11P06 MOSFET Transistor

The FQD11P06 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD11P06 transistor as follows.

FQD11P06 Transistor Specification

Transistor Code		FQD11P06
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO252_DPAK
Drain-Source Voltage (Maximum)	VDS	60V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.185Ohm
Power Dissipation (Maximum)	PD	38W
Operating Junction Temperature (Maximum)		150°C
Total Gate Charge		13nC

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