FQD10N20CTM MOSFET Transistor

The FQD10N20CTM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQD10N20CTM transistor as follows.

FQD10N20CTM Transistor Specification

Transistor Code		FQD10N20CTM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D-PAK
Drain-Source Voltage (Maximum)	VDS	200V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.36Ohm
Power Dissipation (Maximum)	PD	50W
Drain-Source Capacitance		97pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		92nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		20nC

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