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FQB9P25 MOSFET Transistor

The FQB9P25 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB9P25 transistor as follows.

Circuit diagram symbol of the FQB9P25 transistor

FQB9P25 Transistor Specification

Transistor Code FQB9P25
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO263_D2PAK
Drain-Source Voltage (Maximum) VDS 250V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 9.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.62Ohm
Power Dissipation (Maximum) PD 120W
Operating Junction Temperature (Maximum) 150°C

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