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FQB9N50TM MOSFET Transistor

The FQB9N50TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB9N50TM transistor as follows.

Circuit diagram symbol of the FQB9N50TM transistor

FQB9N50TM Transistor Specification

Transistor Code FQB9N50TM
Transistor Type MOSFET
Control Channel Type N-Channel
Package D2-PAK
Drain-Source Voltage (Maximum) VDS 500V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 9A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.73Ohm
Power Dissipation (Maximum) PD 147W
Drain-Source Capacitance 160pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 95nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 28nC

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