FQB9N50TM MOSFET Transistor

The FQB9N50TM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB9N50TM transistor as follows.

FQB9N50TM Transistor Specification

Transistor Code		FQB9N50TM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	500V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	9A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.73Ohm
Power Dissipation (Maximum)	PD	147W
Drain-Source Capacitance		160pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		95nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		28nC

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