FQB9N25CTM MOSFET Transistor

The FQB9N25CTM is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB9N25CTM transistor as follows.

FQB9N25CTM Transistor Specification

Transistor Code		FQB9N25CTM
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		D2-PAK
Drain-Source Voltage (Maximum)	VDS	250V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.43Ohm
Power Dissipation (Maximum)	PD	74W
Drain-Source Capacitance		115pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		85nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		26.5nC

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