FQB8P10 MOSFET Transistor

The FQB8P10 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQB8P10 transistor as follows.

FQB8P10 Transistor Specification

Transistor Code		FQB8P10
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TO263_D2PAK
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.53Ohm
Power Dissipation (Maximum)	PD	65W
Operating Junction Temperature (Maximum)		175°C
Total Gate Charge		12nC

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